The IRF8113PBF is a 30V power MOSFET with a continuous drain current of 17.2A and a maximum power dissipation of 2.5W. It operates over a temperature range of -55°C to 150°C and is packaged in a lead-free SOIC case. The device is RoHS compliant and suitable for surface mount applications.
Sign in to ask questions about the International Rectifier IRF8113PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF8113PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17.2A |
| Current Rating | 16.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 30V |
| Width | 4.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF8113PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
