MOSFET, DUAL N-CH 30V 9.7A SO8
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International Rectifier IRF8313PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 21.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 15.5MR |
| Dual Supply Voltage | 30V |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 760pF |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 8.5ns |
| Turn-On Delay Time | 8.3ns |
| Width | 4mm |
| RoHS | Compliant |
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