
The IRF8910PBF is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 10A and a maximum power dissipation of 2W. The device is packaged in a SOIC package and is RoHS compliant. The IRF8910PBF has a drain to source breakdown voltage of 20V and a gate to source voltage of 20V. It also features a low on-resistance of 13.4mΩ and a fast switching time with a fall time of 4.1ns and a turn-off delay time of 9.7ns.
International Rectifier IRF8910PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 13.4MR |
| Fall Time | 4.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.55V |
| Turn-Off Delay Time | 9.7ns |
| Turn-On Delay Time | 6.2ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF8910PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
