20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PackageSOIC
Current Rating8.9A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF8915 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Current Rating | 8.9A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Power Dissipation | 2W |
| Rds On Max | 18.3mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF8915 Datasheet
Download the complete datasheet for International Rectifier IRF8915 to view detailed technical specifications.
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