The IRF9952 is a dual N and P-channel HEXFET FET with a maximum drain to source voltage of 30V and a maximum power dissipation of 2W. It has a continuous drain current of 2.3A and a maximum current rating of 3.5A. The device is packaged in a surface mount SOIC package and is not RoHS compliant due to containing lead. Operating temperature range is not specified.
International Rectifier IRF9952 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | 3.5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 190pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
No datasheet is available for this part.
