The IRF9952PBF is a dual P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.5A and a drain to source breakdown voltage of 30V. The device is packaged in a SOIC package and is suitable for surface mount applications. The IRF9952PBF is RoHS compliant and lead free.
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International Rectifier IRF9952PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 190pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 20ns |
| Width | 4mm |
| RoHS | Compliant |
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