The IRFH8325TR2PBF is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 3.6W and a nominal Vgs of 1.8V. The device has a continuous drain current of 21A and a drain to source breakdown voltage of 30V. It is packaged in a QFN package and is lead free and RoHS compliant.
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International Rectifier IRFH8325TR2PBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5MR |
| Fall Time | 7.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.17mm |
| Input Capacitance | 2.487nF |
| Lead Free | Lead Free |
| Length | 5.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Width | 5mm |
| RoHS | Compliant |
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