International Rectifier
IRFH8325TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH8325TRPBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.487nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH8325TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFH8325TRPBF to view detailed technical specifications.
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