Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
Sign in to ask questions about the International Rectifier IRFHM830DTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFHM830DTRPBF technical specifications.
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 7.1MR |
| Fall Time | 6.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 1.797nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.1ns |
| Turn-On Delay Time | 9.8ns |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFHM830DTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
