MOSFET MOSFT 30V 40A 3.8mOhm
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International Rectifier IRFHM830TR2PBF technical specifications.
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 3.48nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 12ns |
| Width | 3.3mm |
| RoHS | Compliant |
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