MOSFET N-CH 30V 13A 8PQFN
Sign in to ask questions about the International Rectifier IRFHM8334TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFHM8334TRPBF technical specifications.
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.18nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 8.3ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFHM8334TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.