The IRFHS9351TR2PBF is a P-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of -30V and a continuous drain current of -2.3A. The device is packaged in a SOIC case and is surface mountable. It is RoHS compliant and has a maximum power dissipation of 1.4W.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
Quick Jump:
Technical Specifications
International Rectifier IRFHS9351TR2PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -2.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 7.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 160pF |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 53mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 6.3ns |
| Turn-On Delay Time | 8.3ns |
| Width | 2.1mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHS9351TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS9351TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
