PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
Quick Jump:
Technical Specifications
International Rectifier IRFHS9351TR2PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-2.3A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
7.9ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
160pF
Length
2.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
-1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
53mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
-1.8V
Turn-Off Delay Time
6.3ns
Turn-On Delay Time
8.3ns
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHS9351TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS9351TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
