The IRFR13N15DPBF is a single-element power MOSFET from International Rectifier's HEXFET Series. It features a DPAK package with a surface mount design, suitable for high-power applications. The device can handle a maximum operating temperature of 175°C and a minimum of -55°C. It has a maximum power dissipation of 86W and a continuous drain current of 14A. The MOSFET has a drain-to-source voltage rating of 150V and a gate-to-source voltage rating of 30V. It also has a low on-state resistance of 180mR and a fast switching time with a turn-on delay of 8ns and a turn-off delay of 12ns.
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International Rectifier IRFR13N15DPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 180mR |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 620pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| On-State Resistance | 180R |
| Power Dissipation | 86W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR13N15DPBF to view detailed technical specifications.
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