INTERNATIONAL RECTIFIER IRFR3709ZPBF MOSFET Transistor, N Channel, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
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International Rectifier IRFR3709ZPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 86A |
| Current Rating | 86A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.5MR |
| Fall Time | 3.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.33nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| Width | 6.22mm |
| RoHS | Compliant |
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