The IRFSL4227PBF is a high-power N-channel HEXFET transistor with a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. It features a drain to source breakdown voltage of 200V and a continuous drain current of 62A. The device has a maximum power dissipation of 330W and a gate to source voltage of 30V. It is packaged in a TO-262 case and is available in a rail/Tube packaging with 50 units per package. The IRFSL4227PBF is RoHS compliant and has a nominal Vgs of 5V.
International Rectifier IRFSL4227PBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 4.6nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 33ns |
| Width | 0.19inch |
| RoHS | Compliant |
No datasheet is available for this part.
