The IRFSL4229PBF is a TO-262 packaged N-CHANNEL power MOSFET from International Rectifier, rated for 45A continuous drain current and 250V drain to source breakdown voltage. It features a maximum power dissipation of 330W and operates over a temperature range of -40°C to 175°C. The device is RoHS compliant and suitable for through hole mounting.
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International Rectifier IRFSL4229PBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.65mm |
| Input Capacitance | 4.56nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 48mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 18ns |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFSL4229PBF to view detailed technical specifications.
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