The IRFSL4310ZPBF is a high-power N-channel MOSFET from International Rectifier, featuring a TO-262 package and through-hole mount. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 250W. The device has a drain-to-source breakdown voltage of 100V and a continuous drain current of 127A. It also has a maximum Rds on resistance of 6mR and a turn-on delay time of 20ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFSL4310ZPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 127A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.86nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL4310ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4310ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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