The IRFU9N20DPBF is a 30V HEXFET power MOSFET with a continuous drain current of 9.4A and a maximum operating temperature of 175°C. It features a drain-source on resistance of 380mR and a fall time of 9.3ns. The device is packaged in a TO-251-3 case and is designed for through hole mounting. The IRFU9N20DPBF is RoHS compliant and has a maximum power dissipation of 140W.
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International Rectifier IRFU9N20DPBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 9.3ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.01nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| On-State Resistance | 380R |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| RoHS | Compliant |
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