
N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 23A continuous collector current. This through-hole mounted component offers a low Collector Emitter Saturation Voltage of 2.52V and a maximum power dissipation of 100W. Packaged in a TO-220AB plastic package, it operates within a temperature range of -55°C to 150°C and is lead-free and RoHS compliant. Key switching characteristics include a turn-on delay of 40ns and a turn-off delay of 91ns.
International Rectifier IRG4BC30UDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.52V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 23A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 23A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 91ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4BC30UDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
