N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 23A continuous collector current. Features a low 2.7V Collector-Emitter Saturation Voltage and 100W maximum power dissipation. Designed for through-hole mounting in a TO-220AB plastic package, this RoHS compliant component operates from -55°C to 150°C. Turn-on delay is 25ns with a turn-off delay of 99ns.
PackageTO-220AB
Current Rating23A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRG4BC30WPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Current Rating
23A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
23A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
99ns
Turn-On Delay Time
25ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC30WPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC30WPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
