International Rectifier
IRL6372TRPBF
DUAL N CHANNEL HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; No. of Pins:8 ;RoHS Compliant: Yes
PackageSOIC
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Technical Specifications
International Rectifier IRL6372TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 17.9MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 1.1V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRL6372TRPBF Datasheet
Download the complete datasheet for International Rectifier IRL6372TRPBF to view detailed technical specifications.
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