The IRLHS2242TR2PBF is a surface mount P-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -7.2A and a drain to source breakdown voltage of -20V. The device is packaged in a SOIC case and is lead free. It is RoHS compliant and has a maximum power dissipation of 2.5W.
International Rectifier IRLHS2242TR2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -7.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 7.9ns |
| Width | 2.1mm |
| RoHS | Compliant |
No datasheet is available for this part.
