The MMDF1N05ER2G is a 2 N-Channel HEXFET from International Rectifier, featuring a TSSOP package and surface mount design. It has a maximum drain to source voltage of 20V and a continuous drain current of 4.8A. The device is rated for a maximum power dissipation of 1.2W and has an on-resistance of 35 milliohms. It is available in tape and reel packaging.
PackageTSSOP
MountingSurface Mount
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Technical Specifications
International Rectifier MMDF1N05ER2G technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Input Capacitance | 1.34nF |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier MMDF1N05ER2G Datasheet
Download the complete datasheet for International Rectifier MMDF1N05ER2G to view detailed technical specifications.
No datasheet is available for this part.