P-Channel JFET transistor for surface mount applications, featuring a -25V drain-source breakdown voltage and a continuous drain current of 120mA. This single-element device offers a maximum drain-source on-resistance of 10 Ohms and a nominal gate-source threshold voltage of -1V. Operating within a temperature range of -55°C to 150°C, it is packaged in a SOT-23 case and supplied on a 3000-piece tape and reel. Key specifications include a 350mW power dissipation and fast switching times with a 5ns turn-on delay.
PackageSOT-23
Current Rating-120mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDV302P technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | -120mA |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 13R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 13R |
| Dual Supply Voltage | -25V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.93mm |
| Input Capacitance | 11pF |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | -25V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDV302P Datasheet
Download the complete datasheet for Onsemi FDV302P to view detailed technical specifications.
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