
The FQD5P20TF is a P-channel MOSFET from Onsemi with a maximum operating temperature range of -55 to 150°C. It features a continuous drain current of 3.7A and a drain to source breakdown voltage of -200V. The device is packaged in a TO-252-3 surface mount package and is lead free and RoHS compliant. The MOSFET has a maximum power dissipation of 45W and a typical Rds(on) of 1.4 ohms.
Onsemi FQD5P20TF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | -3.7A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -200V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD5P20TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
