The APT10M19SVFRG is a high-power MOSFET from Ixys, featuring a maximum drain-to-source voltage of 1kV and a continuous drain current of 12A. It has a maximum power dissipation of 300W and an on-resistance of 1.05 ohms. The device is packaged in a TO-247-3 case and is designed for through-hole mounting. It is available in rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys APT10M19SVFRG technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 4nF |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 1.05R |
| Series | MegaMOS™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys APT10M19SVFRG Datasheet
Download the complete datasheet for Ixys APT10M19SVFRG to view detailed technical specifications.
No datasheet is available for this part.