The IXFH28N50F is a high-power N-channel FET from Ixys, featuring a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 28A and a drain to source breakdown voltage of 500V. The device is packaged in a TO-247AD package and is RoHS compliant. It can handle a power dissipation of up to 315W and has a gate to source voltage of 20V.
PackageTO-247AD
PolarityN-CHANNEL
Power315W
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Technical Specifications
Ixys IXFH28N50F technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH28N50F Datasheet
Download the complete datasheet for Ixys IXFH28N50F to view detailed technical specifications.
No datasheet is available for this part.