Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
PackageTO-264 (IXYK)
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Technical Specifications
Ixys IXYK110N120A4 technical specifications.
General
Collector-Emitter Voltage (V_CES)
1200V
Collector Current (I_C110) @ T_C=110°C
110A
Collector-Emitter Saturation Voltage Max (V_CE(sat))
1.80V
Current Fall Time Typical (t_fi(typ))
300ns
Collector-Emitter Voltage Max (V_CES) @ T_J = 25°C to 175°C
1200V
Collector-Gate Voltage Max (V_CGR) @ T_J = 25°C to 175°C, R_GE = 1MΩ
1200V
Gate-Emitter Voltage Max, Continuous (V_GES)
±20V
Gate-Emitter Voltage Max, Transient (V_GEM)
±30V
Collector Current Max (I_C25) @ T_C = 25°C (Chip Capability)
375A
Terminal Current Limit (I_LRMS)
160A
Pulsed Collector Current Max (I_CM) @ T_C = 25°C, 1ms
900A
Reverse Bias Safe Operating Area (RBSOA) Pulsed Collector Current (I_CM) @ V_GE=15V, T_VJ=125C, R_G=2Ω
220A
Reverse Bias Safe Operating Area (RBSOA) V_CE
0.8 V_CESV
Total Power Dissipation Max (P_C) @ T_C = 25°C
1360W
Junction Temperature Range (T_J)
-55 ... +175°C
Maximum Junction Temperature (T_JM)
175°C
Storage Temperature Range (T_stg)
-55 ... +175°C
Lead Soldering Temperature (T_L) @ 1.6mm from case for 10s
300°C
Mounting Torque (M_d)
1.13/10Nm/lb.in
Weight
10g
Collector-Emitter Breakdown Voltage (BV_CES) @ I_C=250µA, V_GE=0V
1200V
Gate-Emitter Threshold Voltage (V_GE(th)) @ I_C=3mA, V_CE=V_GE
4.5 Min 6.5 TypV
Collector-Emitter Cutoff Current (I_CES) @ V_CE=V_CES, V_GE=0V
25 MaxμA
Collector-Emitter Cutoff Current (I_CES) @ V_CE=V_CES, V_GE=0V, T_J=125°C
500 MaxμA
Gate-Emitter Leakage Current (I_GES) @ V_GE=±20V, V_CE=0V
±200 MaxnA
Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=I_C110, V_GE=15V, T_J=25°C (Note 1)
1.45 Typ 1.80 MaxV
Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=I_C110, V_GE=15V, T_J=150°C (Note 1)
1.60 TypV
Transconductance (g_fs) @ I_C=60A, V_CE=10V (Note 1)
48 Min 80 TypS
Input Capacitance (C_ies) @ V_CE=25V, V_GE=0V, f=1MHz
6030 TyppF
Output Capacitance (C_oes) @ V_CE=25V, V_GE=0V, f=1MHz
340 TyppF
Reverse Transfer Capacitance (C_res) @ V_CE=25V, V_GE=0V, f=1MHz
225 TyppF
Total Gate Charge (Q_g(on)) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES
305 TypnC
Gate-Emitter Charge (Q_ge) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES
58 TypnC
Gate-Collector Charge (Q_gc) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES
148 TypnC
Turn-on Delay Time (t_d(on)) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
42 Typns
Current Rise Time (t_ri) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
36 Typns
Turn-on Energy (E_on) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
2.5 TypmJ
Turn-off Delay Time (t_d(off)) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
550 Typns
Current Fall Time (t_fi) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
300 Typns
Turn-off Energy (E_off) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2)
8.4 TypmJ
Turn-on Delay Time (t_d(on)) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
35 Typns
Current Rise Time (t_ri) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
33 Typns
Turn-on Energy (E_on) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
4.4 TypmJ
Turn-off Delay Time (t_d(off)) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
700 Typns
Current Fall Time (t_fi) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
590 Typns
Turn-off Energy (E_off) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2)
14.0 TypmJ
Thermal Resistance, Junction to Case (R_thJC)
0.11 Typ°C/W
Thermal Resistance, Case to Heatsink (R_thCS)
0.15 Typ°C/W
Feature
Optimized for Low Conduction Losses
Feature
Square RBSOA
Feature
Positive Thermal Coefficient of Vce(sat)
Feature
International Standard Package
Advantage
High Power Density
Advantage
Low Gate Drive Requirement
Application
Power Inverters
Application
UPS
Application
Motor Drives
Application
SMPS
Application
PFC Circuits
Application
Battery Chargers
Application
Welding Machines
Application
Lamp Ballasts
Application
Inrush Current Protection Circuits
Package Type
TO-264 (IXYK)
Pin Description G
Gate
Pin Description E
Emitter
Pin Description C
Collector
Pin Description Tab
Collector
Compliance
Package Standard
International Standard Package
Datasheet
Ixys IXYK110N120A4 Datasheet
Download the complete datasheet for Ixys IXYK110N120A4 to view detailed technical specifications.
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