This device is a single N-channel MOSFET in a TO-220C through-hole package. It is rated for 60 V drain-to-source voltage, 120 A continuous drain current, and 208 W power dissipation. The MOSFET specifies 8 mΩ RDS(on) at 10 V gate drive and 78 nC gate charge at 10 V. It operates across a -55 °C to +150 °C temperature range and lists a 4 V gate threshold voltage. Input capacitance is 3.38 nF and reverse transfer capacitance is 200 pF.
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Jilin Sino-Microelectronics MT06N008A technical specifications.
| Channel Type | N-Channel |
| Number of Channels | 1 |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 120A |
| Power Dissipation | 208W |
| RDS(on) | 8 @ 10VmΩ |
| Gate Charge | 78 @ 10VnC |
| Gate Threshold Voltage | 4V |
| Input Capacitance | 3.38nF |
| Reverse Transfer Capacitance | 200pF |
| Operating Temperature | -55 to +150°C |
| Mounting Type | Through Hole |
| RoHS | Yes |
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