N-channel enhancement-mode power MOSFET is rated for 600 V drain-source voltage and 30 A continuous drain current at 25 °C. The device has a maximum on-resistance of 155 mΩ with a 10 V gate drive and supports pulsed drain current up to 60 A. It is avalanche rated and includes a fast intrinsic source-drain diode for power switching applications. The TO-263 package uses the tab as drain and is specified for a -55 °C to 150 °C operating junction temperature range.
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| FET Type | N-channel enhancement mode |
| Drain-Source Voltage | 600V |
| Gate-Source Voltage Continuous | ±30V |
| Gate-Source Voltage Transient | ±40V |
| Continuous Drain Current at 25°C | 30A |
| Pulsed Drain Current | 60A |
| Avalanche Current | 10A |
| Single Pulse Avalanche Energy | 1J |
| Maximum Power Dissipation at 25°C | 500W |
| Drain-Source On Resistance Maximum | 155mΩ |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Forward Transconductance | 10 min, 17 typS |
| Input Capacitance | 2270pF |
| Output Capacitance | 1610pF |
| Reverse Transfer Capacitance | 14pF |
| Turn-On Delay Time | 21ns |
| Rise Time | 43ns |
| Total Gate Charge | 56nC |
| Junction Temperature Range | -55 to 150°C |
| Package Weight | 2.5g |
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