N-channel enhancement-mode power MOSFET supports 100 V drain-to-source voltage and 170 A continuous drain current. The device has a 9 mΩ maximum drain-source on-resistance and 714 W power dissipation rating. It is avalanche rated and includes a fast intrinsic rectifier with 150 ns reverse-recovery time. Through-hole TO-247 packaging supports high-current power switching applications.
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| Transistor Type | N-channel enhancement mode MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 170A |
| Drain-Source On Resistance Max | 9mΩ |
| Power Dissipation | 714W |
| Total Gate Charge | 198nC |
| Reverse Recovery Time | 150ns |
| Mounting Method | Through Hole |
| Package | TO-247 |
| Avalanche Rated | Yes |
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