N-channel enhancement-mode power MOSFET is built for high-voltage switching applications. It supports 600 V drain-source breakdown voltage, 22 A continuous drain current, and 145 milliohm drain-source on-resistance. The through-hole TO-247 package dissipates up to 390 W and operates from -55 °C to 150 °C. Gate ratings include -30 V to 30 V gate-source voltage, 3.5 V to 5 V threshold voltage, and 37 nC gate charge.
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| MOSFET Type | N-Channel Enhancement Mode |
| Transistor Polarity | N-Channel |
| Number of Channels | Single |
| Continuous Drain Current | 22A |
| Drain-Source Breakdown Voltage | 600V |
| Drain-Source On Resistance | 145mohm |
| Gate-Source Voltage | -30 to 30V |
| Gate-Source Threshold Voltage | 3.5 to 5V |
| Gate Charge | 37nC |
| Power Dissipation | 390W |
| Operating Temperature Range | -55 to 150°C |
| Mounting Type | Through Hole |
| Package | TO-247 |
| Qualification | AEC-Q101 |
| Qualification | AEC-Q101 |
Download the complete datasheet for Littelfuse-IXYS IXFH22N60X2A to view detailed technical specifications.
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