N-channel enhancement-mode HiPerFET power MOSFET is rated for 500 V drain-to-source voltage and 40 A continuous drain current at 25 °C case temperature. The device has a maximum on-resistance of 0.14 ohm with a 10 V gate drive and supports avalanche-rated operation with high dv/dt capability. The TO-247AD package provides 500 W power dissipation and 0.25 K/W junction-to-case thermal resistance. Operating junction temperature spans -55 °C to 150 °C, and the molded epoxy meets UL 94 V-0 flammability classification.
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| FET Type | N-Channel |
| Mode | Enhancement |
| Drain-to-Source Voltage | 500V |
| Continuous Drain Current | 40A |
| Pulsed Drain Current | 160A |
| Drain-to-Source On Resistance | 0.14 maxohm |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Continuous Gate-to-Source Voltage | ±30V |
| Transient Gate-to-Source Voltage | ±40V |
| Power Dissipation | 500W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Forward Transconductance | 22 min, 35 typS |
| Input Capacitance | 3800pF |
| Output Capacitance | 660pF |
| Reverse Transfer Capacitance | 180pF |
| Turn-On Delay Time | 17ns |
| Rise Time | 20ns |
| Turn-Off Delay Time | 56ns |
| Fall Time | 14ns |
| Total Gate Charge | 130nC |
| Reverse Recovery Time | 250ns |
| Thermal Resistance Junction-to-Case | 0.25K/W |
| Weight | 6g |
| Ul 94 | V-0 flammability classification |
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