N-channel enhancement-mode HiPerFET power MOSFET supports 500 V drain-to-source voltage and 44 A continuous drain current at 25 °C case temperature. The device is avalanche rated and includes a fast intrinsic rectifier with reverse recovery time up to 250 ns. It has maximum on-resistance of 140 mΩ at 10 V gate drive and 0.5 times rated drain current. The TO-247 through-hole package provides a drain-connected tab and is rated for 830 W power dissipation at 25 °C case temperature.
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Littelfuse-IXYS IXFH44N50Q3 technical specifications.
| Transistor Type | N-channel enhancement mode MOSFET |
| Drain-Source Voltage | 500V |
| Drain-Gate Voltage | 500V |
| Continuous Gate-Source Voltage | ±30V |
| Transient Gate-Source Voltage | ±40V |
| Continuous Drain Current | 44A |
| Pulsed Drain Current | 130A |
| Avalanche Current | 44A |
| Single Pulse Avalanche Energy | 1.5J |
| Peak Diode Recovery dV/dt | 50V/ns |
| Power Dissipation | 830W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Drain-Source On Resistance | 140 maxmΩ |
| Gate Threshold Voltage | 3.5 to 6.5V |
| Forward Transconductance | 17 min, 28 typS |
| Input Capacitance | 4800pF |
| Output Capacitance | 625pF |
| Reverse Transfer Capacitance | 56pF |
| Total Gate Charge | 93nC |
| Reverse Recovery Time | 250ns |
| Thermal Resistance Junction-to-Case | 0.15°C/W |
| Package Weight | 6.0g |
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