This N-channel enhancement-mode power MOSFET is rated for 650 V drain-source voltage and 46 A continuous drain current at 25°C case temperature. It uses the X2-Class HiPerFET structure with avalanche rating and a fast intrinsic diode. Maximum on-resistance is 69 mΩ at 10 V gate drive, and maximum power dissipation is 660 W. The device is housed in a TO-247 package with drain tab connection and operates over a -55°C to +150°C junction temperature range.
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Littelfuse-IXYS IXFH46N65X2 technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 46A |
| Pulsed Drain Current | 100A |
| Gate-Source Voltage Continuous | ±30V |
| Gate-Source Voltage Transient | ±40V |
| On-Resistance RDS(on) Max | 69mΩ |
| Gate Threshold Voltage Min | 3.5V |
| Gate Threshold Voltage Max | 5.5V |
| Forward Transconductance Min | 17S |
| Forward Transconductance Typ | 28S |
| Input Capacitance Ciss | 4570pF |
| Output Capacitance Coss | 2740pF |
| Reverse Transfer Capacitance Crss | 2.2pF |
| Total Gate Charge Qg | 98nC |
| Gate-Source Charge Qgs | 31nC |
| Gate-Drain Charge Qgd | 26nC |
| Turn-On Delay Time | 25ns |
| Rise Time | 24ns |
| Turn-Off Delay Time | 50ns |
| Fall Time | 12ns |
| Power Dissipation | 660W |
| Junction Temperature Range | -55 to +150°C |
| Mounting Torque | 1.13 / 10Nm/lb.in |
| Weight | 6g |
| Package | TO-247 |
