This N-channel Ultra X HiPerFET power MOSFET is rated for 600 V drain-to-source voltage and 50 A continuous drain current at 25°C case temperature. It features a maximum 73 mΩ on-resistance at 10 V gate drive, 116 nC typical gate charge, and a fast intrinsic diode with 195 ns reverse recovery. The device is avalanche rated, supports up to 660 W power dissipation, and operates over a -55°C to 150°C junction temperature range. The IXFH variant is supplied in a through-hole TO-247-3 package.
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Littelfuse-IXYS IXFH50N60X technical specifications.
| FET Type | N-Channel |
| Drain to Source Voltage | 600V |
| Continuous Drain Current | 50A |
| Pulsed Drain Current | 120A |
| On Resistance | 73mΩ |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Gate-Source Voltage | ±30V |
| Power Dissipation | 660W |
| Avalanche Energy | 2J |
| dv/dt | 50V/ns |
| Operating Junction Temperature | -55 to 150°C |
| Input Capacitance | 4660pF |
| Output Capacitance | 3300pF |
| Reverse Transfer Capacitance | 30pF |
| Gate Charge | 116nC |
| Rise Time | 62ns |
| Turn-Off Delay Time | 60ns |
| Thermal Resistance Junction-to-Case | 0.19°C/W |
| Body Diode Forward Voltage | 1.4V |
| Reverse Recovery Time | 195ns |
| Rohs Status | ROHS3 Compliant |
| Reach Status | REACH Unaffected |
Download the complete datasheet for Littelfuse-IXYS IXFH50N60X to view detailed technical specifications.
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