This device is an N-channel power MOSFET rated for 650 V drain-to-source voltage and 60 A drain current. It uses the X2-Class HiPerFET platform and is supplied in a TO-247-3 through-hole package. The maximum on-resistance is 52 mΩ, rated power dissipation is 780 W, and maximum gate-source voltage is 30 V. Key switching parameters include 108 nC gate charge, 6300 pF input capacitance, 30 ns turn-on delay, 63 ns turn-off delay, 23 ns rise time, and 12 ns fall time. It is specified for operation from -55 °C to +150 °C and is marked as active, RoHS compliant, and lead free.
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Littelfuse-IXYS IXFH60N65X2 technical specifications.
| FET Type | N-Channel |
| Number of Channels | 1 |
| Drain-to-Source Voltage | 650V |
| Drain Current | 60A |
| Drain-Source On Resistance Max | 52mΩ |
| Rated Power Dissipation | 780W |
| Gate Charge | 108nC |
| Gate-Source Voltage Max | 30V |
| Turn-on Delay Time | 30ns |
| Turn-off Delay Time | 63ns |
| Rise Time | 23ns |
| Fall Time | 12ns |
| Operating Temperature Range | -55 to +150°C |
| Gate Source Threshold | 5V |
| Input Capacitance | 6300pF |
| Mounting Method | Through Hole |
| RoHS | Compliant |
| Lead Free | Yes |
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