N-channel enhancement-mode power MOSFET is rated for 600 V drain-source voltage and 30 A continuous drain current at 25 °C case temperature. The device uses a TO-220 package and has a maximum on-resistance of 155 mΩ at 10 V gate drive. Avalanche-rated construction, a fast intrinsic diode, and 50 V/ns dv/dt capability support high-voltage switching applications. Operating junction and storage temperature ranges extend from -55 °C to 150 °C, with 500 W maximum power dissipation at 25 °C case temperature.
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| Transistor Type | N-channel enhancement mode MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 30A |
| Pulsed Drain Current | 60A |
| Drain-Source On Resistance | 155 maxmΩ |
| Gate Threshold Voltage | 2.5 min, 4.5 maxV |
| Gate-Source Voltage | ±30 continuousV |
| Transient Gate-Source Voltage | ±40V |
| Power Dissipation | 500W |
| Single Pulse Avalanche Energy | 1J |
| Peak Diode Recovery dv/dt | 50V/ns |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Input Capacitance | 2270 typpF |
| Output Capacitance | 1610 typpF |
| Reverse Transfer Capacitance | 14 typpF |
| Total Gate Charge | 56 typnC |
| Turn-On Delay Time | 21 typns |
| Rise Time | 43 typns |
| Junction-to-Case Thermal Resistance | 0.25 max°C/W |
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