N-channel HiPerFET power MOSFET provides a 600 V drain-source rating and 38 A continuous drain current at 25 °C. The device uses an ISOPLUS247 package with an electrically isolated back surface and 2500 V RMS isolation. On-resistance is rated at 130 mΩ with a 10 V gate drive, and the fast intrinsic diode has a reverse recovery time of 250 ns. It is intended for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, and motor control over a -55 °C to 150 °C junction temperature range.
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| FET Type | N-Channel MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current at 25 C | 38A |
| Pulsed Drain Current | 60A |
| Drain-Source On-Resistance | 130mΩ |
| Gate-Source Threshold Voltage | 2.5 to 4.5V |
| Total Gate Charge | 330nC |
| Input Capacitance | 8900pF |
| Output Capacitance | 1000pF |
| Reverse Transfer Capacitance | 330pF |
| Turn-On Delay Time | 42ns |
| Rise Time | 55ns |
| Turn-Off Delay Time | 110ns |
| Fall Time | 45ns |
| Reverse Recovery Time | 250ns |
| Power Dissipation at 25 C | 400W |
| Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.30K/W |
| Isolation Voltage | 2500V RMS |
| Package | ISOPLUS247 |
| RoHS | Compliant |
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