This N-channel enhancement-mode power MOSFET is rated for 500 V drain-to-source voltage and 50 A continuous drain current at 25°C case temperature. It uses the HiperFET Q3-Class process and an ISOPLUS247 package with an electrically isolated tab and 2500 V electrical isolation. The device specifies a maximum on-resistance of 72 mΩ at 10 V gate drive, 570 W power dissipation, and operating junction temperatures from -55°C to +150°C. It also integrates a fast intrinsic rectifier and is characterized with 200 nC total gate charge and 250 ns reverse recovery time.
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Littelfuse-IXYS IXFR80N50Q3 technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 500V |
| Continuous Drain Current | 50A |
| Pulsed Drain Current | 240A |
| Continuous Gate-Source Voltage | ±30V |
| Transient Gate-Source Voltage | ±40V |
| On-Resistance RDS(on) | 72mΩ |
| Power Dissipation | 570W |
| Junction Temperature Range | -55 to 150°C |
| Isolation Voltage | 2500V |
| Avalanche Energy | 5J |
| Input Capacitance Ciss | 10nF |
| Output Capacitance Coss | 1260pF |
| Reverse Transfer Capacitance Crss | 115pF |
| Total Gate Charge Qg | 200nC |
| Gate-Source Charge Qgs | 77nC |
| Gate-Drain Charge Qgd | 90nC |
| Turn-On Delay Time | 30ns |
| Rise Time | 20ns |
| Turn-Off Delay Time | 43ns |
| Fall Time | 15ns |
| Thermal Resistance Junction-to-Case | 0.22°C/W |
| Reverse Recovery Time | 250ns |
