N-channel enhancement-mode power MOSFET provides a 600 V drain-source rating and 48 A continuous drain current at 25 °C case temperature. The device has a maximum drain-source on-resistance of 140 mΩ and supports 1000 W power dissipation at 25 °C case temperature. It uses a PLUS247 through-hole package with gate, drain, and source terminals and the tab connected to drain. The intrinsic source-drain diode is rated for 48 A continuous current, 300 ns reverse recovery time, and 1.4 V maximum forward voltage.
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| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 48A |
| Pulsed Drain Current | 120A |
| Gate-Source Voltage Continuous | ±30V |
| Drain-Source On-Resistance Max | 140mΩ |
| Power Dissipation | 1000W |
| Operating Junction Temperature | -55 to 150°C |
| Gate Threshold Voltage | 3.5 min, 6.5 maxV |
| Forward Transconductance | 20 min, 36 typS |
| Input Capacitance | 7020 typpF |
| Output Capacitance | 790 typpF |
| Reverse Transfer Capacitance | 70 typpF |
| Total Gate Charge | 140 typnC |
| Turn-On Delay Time | 37 typns |
| Rise Time | 11 typns |
| Turn-Off Delay Time | 40 typns |
| Fall Time | 9 typns |
| Thermal Resistance Junction-to-Case | 0.125 max°C/W |
| Reverse Recovery Time | 300 maxns |
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