This N-channel enhancement-mode power MOSFET is part of the Q3-Class HiPerFET family and is rated for 500 V drain-to-source voltage and 80 A continuous drain current at 25°C case temperature. It provides a maximum on-resistance of 65 mΩ at 10 V gate drive, 200 nC maximum gate charge, and 1250 W maximum power dissipation. The device includes a fast intrinsic rectifier with 250 ns maximum reverse recovery time and supports dv/dt up to 50 V/ns. It is supplied in a TO-247 PLUS package and operates over a -55°C to 150°C junction temperature range.
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Littelfuse-IXYS IXFX80N50Q3 technical specifications.
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 500V |
| Continuous Drain Current at 25°C | 80A |
| Pulsed Drain Current | 240A |
| On-Resistance RDS(on) Max at 25°C | 65mΩ |
| Gate Threshold Voltage | 3.5 to 6.5V |
| Gate Charge Qg Max | 200nC |
| Input Capacitance Ciss | 10000pF |
| Power Dissipation | 1250W |
| Reverse Recovery Time trr Max | 250ns |
| Thermal Resistance Junction-Case | 0.10°C/W |
| Operating Junction Temperature | -55 to 150°C |
| dv/dt | 50V/ns |
| Avalanche Energy EAS | 5J |
| Forward Transconductance gfs | 35 to 55S |
| Body Diode Forward Voltage | 1.4V |
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