N-channel enhancement-mode TrenchMV power MOSFET is avalanche rated for high-current switching applications. The device is rated for 100 V drain-source voltage and 180 A continuous drain current at 25 °C case temperature, with 6.4 mΩ maximum on-resistance at 10 V gate drive. It supports 480 W power dissipation at 25 °C case temperature and operates over a -55 °C to 175 °C junction temperature range. The TO-263 seven-lead package uses the tab as drain and multiple source pins for low inductance and high current handling.
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| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 180A |
| Package RMS Current Limit | 120A |
| Pulsed Drain Current | 450A |
| Gate-Source Voltage Transient | ±30V |
| Drain-Source On-Resistance Max | 6.4mΩ |
| Drain-Source On-Resistance Typ | 5.4mΩ |
| Gate Threshold Voltage Min | 2.5V |
| Gate Threshold Voltage Max | 4.5V |
| Single Pulse Avalanche Energy | 750mJ |
| Power Dissipation | 480W |
| Forward Transconductance Typ | 110S |
| Input Capacitance | 6900pF |
| Output Capacitance | 923pF |
| Reverse Transfer Capacitance | 162pF |
| Total Gate Charge | 151nC |
| Thermal Resistance Junction-to-Case | 0.31°C/W |
| Junction Temperature Range | -55 to 175°C |
| Weight | 3g |
