This device is an N-channel trench gate power MOSFET rated for 55 V drain-to-source voltage and 200 A continuous drain current at 25°C case temperature. It has a maximum on-resistance of 4.2 mΩ at 25°C and a typical gate charge of 109 nC for high-current switching applications. The TO-263 package supports 360 W power dissipation and 0.42 °C/W junction-to-case thermal resistance. It operates from -55°C to 175°C junction temperature, is avalanche rated, and is intended for DC/DC converters, battery chargers, synchronous rectification, UPS systems, and motor-drive applications.
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Littelfuse-IXYS IXTA200N055T2 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 55V |
| Continuous Drain Current @ 25°C | 200A |
| Pulsed Drain Current | 500A |
| On-Resistance Max @ 25°C | 4.2mΩ |
| Gate Charge | 109nC |
| Input Capacitance | 6970pF |
| Reverse Recovery Time | 49ns |
| Power Dissipation | 360W |
| Junction-to-Case Thermal Resistance | 0.42°C/W |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Operating Junction Temperature | -55 to 175°C |
| Avalanche Energy | 600mJ |
| Source-Drain Diode Forward Voltage | 1.1V |
| RoHS | Compliant |
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