N-channel enhancement-mode power MOSFET provides a 100 V drain-source rating and 160 A continuous drain current capability. The device uses TrenchT2 technology with low on-resistance for high-current switching applications. It is avalanche rated and specified for operation from -55 °C to 175 °C junction temperature. The TO-247AD through-hole package supports high power dissipation and low junction-to-case thermal resistance.
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| Transistor Type | N-channel MOSFET |
| Technology | TrenchT2 |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 160A |
| Drain-Source On-Resistance Max | 7.5mΩ |
| Gate-Source Voltage Max | ±20V |
| Gate Threshold Voltage | 2.5 to 4.5V |
| Pulsed Drain Current | 480A |
| Power Dissipation | 890W |
| Operating Junction Temperature | -55 to 175°C |
| Storage Temperature | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.17°C/W |
| Mounting Type | Through hole |
| Package | TO-247AD |
Download the complete datasheet for Littelfuse-IXYS IXTH160N10T to view detailed technical specifications.
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