This N-channel enhancement mode trench gate power MOSFET is rated for 55 V drain-to-source voltage and 260 A continuous drain current at 25 °C case temperature. It provides a maximum 3.3 mΩ on-resistance at 10 V gate drive, 140 nC typical gate charge, and 480 W power dissipation. The device is housed in a TO-247 package and operates across a -55 °C to 175 °C junction temperature range. Typical capacitances are 10.8 nF input, 1460 pF output, and 215 pF reverse transfer, with 60 ns typical reverse recovery time.
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Littelfuse-IXYS IXTH260N055T2 technical specifications.
| Drain-Source Voltage | 55V |
| Continuous Drain Current | 260A |
| Pulsed Drain Current | 780A |
| On-Resistance RDS(on) Max | 3.3mΩ |
| Gate Charge Typ | 140nC |
| Power Dissipation | 480W |
| Input Capacitance Ciss Typ | 10800pF |
| Output Capacitance Coss Typ | 1460pF |
| Reverse Transfer Capacitance Crss Typ | 215pF |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Thermal Resistance Junction-Case | 0.31°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Reverse Recovery Time Typ | 60ns |
| Package Type | TO-247 |
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