This device is an N-channel power MOSFET rated for 45 V drain-source voltage and 70 A continuous drain current at 25 °C. It uses trench DMOS technology and specifies a maximum drain-source on-resistance of 9 mΩ at 10 V gate drive and 11.5 mΩ at 4.5 V gate drive. The part is supplied in a TO-251 package, supports pulsed drain current up to 280 A, and is rated for 83 W power dissipation. Operating junction temperature is specified from -55 °C to 150 °C, with applications including motor drives, UPS systems, and DC-DC converters.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Lonten LNH045R090 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Lonten LNH045R090 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 45V |
| Continuous Drain Current (Tc=25°C) | 70A |
| Continuous Drain Current (Tc=100°C) | 42A |
| Pulsed Drain Current | 280A |
| Gate-Source Voltage | ±20V |
| Avalanche Energy | 110mJ |
| Power Dissipation | 83W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Gate Threshold Voltage | 0.9 to 1.8V |
| Drain-Source On-Resistance @10V,20A | 9 maxmΩ |
| Drain-Source On-Resistance @4.5V,10A | 11.5 maxmΩ |
| Input Capacitance | 2440 typpF |
| Output Capacitance | 190 typpF |
| Reverse Transfer Capacitance | 126 typpF |
| Total Gate Charge | 49.3 typnC |
| Reverse Recovery Time | 23.3 typns |
Download the complete datasheet for Lonten LNH045R090 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
