This device is an N-channel enhancement-mode power MOSFET built with trench DMOS technology for high-efficiency fast-switching applications. It is rated for 50 V drain-source voltage and 80 A continuous drain current at 25°C case temperature, with a maximum on-resistance of 7.5 mΩ at 10 V gate drive. The transistor is supplied in a TO-251 package and supports junction operation from -55°C to 150°C. Typical applications include motor drives, UPS equipment, and DC-DC converters.
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Lonten LNH05R075 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 50V |
| Continuous Drain Current (Tc=25°C) | 80A |
| Continuous Drain Current (Tc=100°C) | 50A |
| Pulsed Drain Current | 320A |
| Gate-Source Voltage | ±20V |
| Avalanche Energy | 182mJ |
| Power Dissipation (Tc=25°C) | 110W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.1°C/W |
| Gate Threshold Voltage | 0.9 to 1.8V |
| Drain-Source On-Resistance (VGS=10V, ID=30A) | 7.5 maxmΩ |
| Drain-Source On-Resistance (VGS=4.5V, ID=20A) | 8.5 maxmΩ |
| Input Capacitance | 3834 typpF |
| Total Gate Charge | 58.2 typnC |
| Reverse Recovery Time | 43 typns |
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