N-channel super-junction power MOSFET provides 600 V drain-source voltage rating and 23 A continuous drain current at 25 °C case temperature. The device has 0.16 ohm maximum on-resistance, 34.6 nC typical total gate charge, and 195 W power dissipation in a TO-220 package. It operates across a -55 °C to 150 °C junction and storage temperature range and is rated for PFC, SMPS, and UPS power applications. The MOSFET is 100% UIS tested and RoHS compliant.
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| MOSFET Channel Type | N-Channel |
| Drain-Source Voltage | 600V |
| Maximum Junction Drain-Source Voltage | 650V |
| Continuous Drain Current at 25°C Case | 23A |
| Continuous Drain Current at 100°C Case | 14.5A |
| Pulsed Drain Current | 69A |
| Gate-Source Voltage | ±30V |
| Maximum Drain-Source On-Resistance | 0.16Ω |
| Typical Total Gate Charge | 34.6nC |
| Single Pulse Avalanche Energy | 556mJ |
| Power Dissipation | 195W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.64°C/W |
| Thermal Resistance Junction-to-Ambient | 65°C/W |
| Drain-Source Breakdown Voltage | 600 minV |
| Gate Threshold Voltage | 2.5 min, 3.5 typ, 4.5 maxV |
| Typical Input Capacitance | 1794pF |
| Typical Output Capacitance | 59pF |
| Typical Reverse Transfer Capacitance | 1.6pF |
| Typical Turn-On Delay Time | 72ns |
| Typical Rise Time | 13ns |
| Typical Turn-Off Delay Time | 66.6ns |
| Typical Fall Time | 5.5ns |
| Diode Forward Voltage | 1.1 maxV |
| RoHS | Compliant |
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