This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 104 A continuous drain current at 25°C. It uses split-gate trench DMOS technology to achieve low on-resistance, with a maximum RDS(on) of 4.6 mΩ at 10 V gate drive. The device is housed in a TO-263 surface-mount package and is intended for high-efficiency fast-switching applications such as motor drives, UPS systems, and DC-DC converters. It supports junction temperatures from -55°C to 150°C and is specified for 89 W power dissipation.
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Lonten LSGC06R046HWB technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ 25°C | 104A |
| Continuous Drain Current @ 100°C | 65A |
| Pulsed Drain Current | 312A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 89W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-Source On-Resistance Max @ VGS=10V | 4.6mΩ |
| Input Capacitance | 3511pF |
| Output Capacitance | 1176pF |
| Reverse Transfer Capacitance | 67pF |
| Total Gate Charge | 48nC |
| Thermal Resistance Junction-to-Case | 1.4°C/W |
| Reverse Recovery Time | 24ns |
| Diode Forward Voltage | 1.2V |
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